Carbon Nanotube Growth

Carbon Nanotube Growth

Carbon Nanotube Growth by Oxford Instruments Plasma Technology

Growth temperature is lowered by Plasma
Plasma enables the catalyst thin film to form islands, which would not form without at that temperature.
Plasma treatment of catalyst provides denser, faster growth relative to no treatment and even over thermal treatment.
Plasma provides for Alignment plus further diameter and density control.
Plasma growth provides selective area growth .

Technology:

Parallel Plate Reactor
Shower Head Gas inlet temperature range: 600°C - 800°C
CNTs can be grown with or without plasma
The plasma is also used to preclean the seed layer and to clean the process chamber
Aligned growth rate > 40 nm/ min
Random growth rate ca 300 nm/ min

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Tool for Carbon Nanotube Growth

System for Carbon Nanoscale Growth