Silicon Germanium Deposition PECVD and CVD (SiGe)

10 µm thick SiGe showing excellent
contact hole filling

PECVD polycrystalline SiGe by multilayer process at 450° C (100 nm amorphous PECVD SiGe seed layer to avoid the long incubation time on SiO2/ CVD SiGe crystallisation seed layer for subsequent low emperature polycrystalline PECVD SiGe growth)

• Film resistivity 1 m ohm cm
• Contact resistivity SiGe/Al 
• Between 6×10-6 -9×10-5 ohm cm2 stress - 5 MPa
• CVD SiGe can be grown at 450° C at just 20 nm/ min
• PECVD microcrystalline SiGe can be deposited at 300° - 400° C with 10 - 20 nm/ min
• IMEC proprietary and patented process