PolySi Deposition - Polysilicon Deposition

Si LPCVD rate (nm/ min) vs temperature (°C)
580° - 620°C: transition region

PolySi LP CVD & PECVD

Technology:

• Parallel Plate Reactor
• Shower Head Gas inlet
• SiH4 based process                                                                                                          

Results:

• LPCVD of polycrystalline silicon at 650°C
• Rate : > 40 nm/min
• Uniformity: < +/-2 % across 100 mm wafer
• XRD and Raman analysis of the as deposited films demonstrate the crystalline nature of the films:
  grain sizes > 100 nm and a degree of crystallinity > 80 %.
• The polysilicon films grow preferentially along <1 1 0> orientation and crystallization occurs along <1 1 1> orientation.